symbol v v drain-source voltage 20 maximum units parameter absolute maximum ratings t a =25c unless otherwise noted AO6404 20v n-channel mosfet product summary v ds (v) = 20v i d = 8.6a (v gs = 10v) r ds(on) < 17m w (v gs = 10v) r ds(on) < 18m w (v gs = 4.5v) r ds(on) < 24m w (v gs = 2.5v) r ds(on) < 33m w (v gs = 1.8v) esd rating: 2000v hbm general description the AO6404 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. tsop6 top view bottom view pin1 d d g d s d top view 1 2 3 6 5 4 g d s v ds v gs i dm t j , t stg symbol typ max 45 62.5 70 110 r q jl 33 50 t a =70c i d 8.6 v v 6.8 30 pulsed drain current b power dissipation a t a =25c a p d 2 drain-source voltage 20 continuous drain current a t a =25c t a =70c c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage junction and storage temperature range c 1.28 -55 to 150 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja alpha & omega semiconductor, ltd.
AO6404 symbol min typ max units bv dss 20 v 10 t j =55c 25 i gss 10 m a bv gso 12 v v gs(th) 0.5 0.75 1 v i d(on) 30 a 13.4 17 t j =125c 16 20 14.8 18 m w 18.8 24 m w 25.5 33 m w g fs 36 s v sd 0.73 1 v i s 2.9 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 w q g 17.9 nc q gs 1.5 nc gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =4.5v, v ds =10v, i d =8.5a gate source charge r ds(on) i s =1a,v gs =0v dynamic parameters v gs =0v, v ds =10v, f=1mhz m w v gs =2.5v, i d =4a maximum body-diode continuous current input capacitance output capacitance v gs =1.8v, i d =3a forward transconductance diode forward voltage v ds =5v, i d =8a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =v gs i d =250 m a v ds =16v, v gs =0v v ds =0v, v gs =10v m a v gs =4.5v, v ds =5v v gs =10v, i d =8.5a gate-body leakage current static drain-source on-resistance v gs =4.5v, i d =5a gate-source breakdown voltage v ds =0v, i g =250ua gate threshold voltage reverse transfer capacitance switching parameters alpha & omega semiconductor, ltd. q gs 1.5 nc q gd 4.7 nc t d(on) 2.5 ns t r 7.2 ns t d(off) 49 ns t f 10.8 ns t rr 22 ns q rr 9.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice turn-off fall time v gs =4.5v, v ds =10v, i d =8.5a gate source charge gate drain charge body diode reverse recovery time body diode reverse recovery charge i f =8.5a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.2 w , r gen =3 w turn-on delaytime i f =8.5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev4: feb. 2012 alpha & omega semiconductor, ltd.
AO6404 typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =1.5v 2v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics 5 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v v gs =4.5v v gs =2.5v 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v v gs =10v v gs =1.8v v gs =1.8v i d =5a alpha & omega semiconductor, ltd. 5 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =5a 25 c 125 c alpha & omega semiconductor, ltd.
AO6404 typical electrical and thermal characteristics 0 1 2 3 4 5 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) 100 m s 10ms 1ms 0.1s 1s dc r ds(on) limited t j(max) =150 c t a =25 c v ds =10v i d =8a t j(max) =150 c t a =25 c 10 m s alpha & omega semiconductor, ltd. 0 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance 0.1 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) single pulse d=t on /(t on +t off ) t j,pk =t a +p dm .z q ja .r q ja r q ja =110 c/w t on t off p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd.
|
